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         RB520G-30 Diodes Rev.C 1/3 VMD2 0.5 1.2 0.5 0.76±0.1 4±0.1 4±0.1 2±0.05 φ1.5+0.1 0 3.5±0.05 1.75±0.1 8.0±0.3 0.1 0.18±0.05 0.65±0.05 φ0.5 0.4 2±0.05 0.3 1.11±0.05 2.1±0.1 Schottky barrier diode RB520G-30 』Applications Low current rectification 』Features 1) Ultra Small mold type. (VMD2) 2) Low IR. 3) High reliability. 』Construction Silicon epitaxial planar 』 Dimensions (Unit : mm) 』 Land size figure (Unit : mm) 』Structure 』 Taping specifications (Unit : mm) 』Absolute maximum ratings (Ta=25 °C) 』Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Conditions VF --0.45VIF=10mA IR --0.5μAVR=10V Reverse current Parameter Forward voltage Symbol Unit VR V Io mA100 IFSM mA Tj ℃ Tstg ℃ Parameter Reverse voltage(DC) Average rectified forward current -40 to +125 Limits 30 Forward current surge peak （60Hz?1cyc） 500 Junction temperature Storage temperature 125 ROHM : VMD2 dot (year week factory) 0.13±0.03 0.5±0.05 0.27±0.03 0.6±0.05 1.0±0.05 1.4±0.05 |